Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

被引：71

作者：

Kneissl, M ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Miyashita, N ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 15期

关键词：

D O I：

10.1063/1.1568160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as low as 5 kA/cm(2) for laser diodes with emission wavelengths between 368 nm and 378 nm and have demonstrated lasing at 363.2 nm at room temperature, the shortest wavelength yet reported for a semiconductor laser diode. The cw operation up to a heat sink temperature of 40 degreesC was demonstrated on a series of narrow ridge-waveguide devices processed with chemically assisted ion beam etched mirrors and high reflective coating on both facets. The shortest wavelength emission under cw operation conditions was 373.5 nm with output powers of more than 1 mW. (C) 2003 American Institute of Physics.

引用

页码：2386 / 2388

页数：3

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