Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition

被引：20

作者：

Ye, PD

Wilk, DG

Yang, B

Chu, SNG

Ng, KK

Bude, J

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Agere Syst, Murray Hill, NJ 07974 USA

[3] ASM Amer, Phoenix, AZ 85034 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 05期

关键词：

GaAs MESFET; atomic layer deposition; breakdown field;

D O I：

10.1016/j.sse.2005.01.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal-semiconductor field-effect transistors (MESFETs). The breakdown characteristic of a MESFET is greatly improved by both Al2O3 and HfO2 passivation. Three-terminal transistor breakdown voltage is improved to a maximum level of 20 V with Al2O3 passivation from 11 V without any surface passivation. With the removal of native oxide and passivation on GaAs surface at drain-gate (D-G) and source-gate (S-G) spacings, the device breakdown characteristics are significantly improved. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：790 / 794

页数：5

共 27 条

[1] THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].