Sulfur passivation of GaAs metal-semiconductor field-effect transistor

被引：47

作者：

Dong, Y ^{[1
]}

Ding, XM

Hou, XY

Li, Y

Li, XB

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[2] Minist Informat Ind, Elect Res Inst 13, Shijiazhuang 050002, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1331642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A passivation technique consisting of a (NH4)(2)S dip followed by GaS deposition has been applied to a GaAs microwave-power metal-semiconductor field-effect transistor (MESFET). The breakdown characteristic of the MESFET is greatly improved upon the (NH4)(2)S treatment, and a stable passivation effect can be achieved by GaS film deposition. It is found that the FET current-voltage characteristics are closely related to variations in the pinning position of the GaAs surface Fermi level. With the surface passivated, a depletion layer can be properly formed and protected, which is of benefit to the control of the device parameters. (C) 2000 American Institute of Physics. [S0003-6951(00)04150-4].

引用

页码：3839 / 3841

页数：3

共 20 条

[1] Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs (lambda=0.98 mu m) laser diodes [J].

Beister, G ;

Maege, J ;

Gutsche, D ;

Erbert, G ;

Sebastian, J ;

Vogel, K ;

Weyers, M ;

Wurfl, J ;

Daga, OP .

APPLIED PHYSICS LETTERS, 1996, 68 (18) :2467-2468

[2] Passivation of the GaAs(100) surface with a vapor-deposited GaS film [J].

Cao, XA ;

Hu, HT ;

Ding, XM ;

Yuan, ZL ;

Dong, Y ;

Chen, XY ;

Lai, B ;

Hou, XY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (05) :2656-2659

[3]

CAO XA, 1997, APPL PHYS LETT, V70, P1

[4] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

DUNGAN, TE .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

[5] GAAS DEVICE PASSIVATION USING SPUTTERED SILICON-NITRIDE [J].

CHANG, EY ;

CIBUZAR, GT ;

VANHOVE, JM ;

NAGARAJAN, RM ;

PANDE, KP .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1638-1640

[6] X-RAY PHOTOELECTRON-SPECTROSCOPY OF AMMONIUM SULFIDE TREATED GAAS(100) SURFACES [J].

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN ;

CARPENTER, MS ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :365-367

[7] Passivation of GaAs surface by sulfur glow discharge [J].

Hou, XY ;

Chen, XY ;

Li, ZS ;

Ding, XM ;

Wang, X .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1429-1431

[8] GALLIUM-ARSENIDE TRANSISTORS - REALIZATION THROUGH A MOLECULARLY DESIGNED INSULATOR [J].

JENKINS, PP ;

MACINNES, AN ;

TABIBAZAR, M ;

BARRON, AR .

SCIENCE, 1994, 263 (5154) :1751-1753

[9] EFFECTS OF SULFIDE PASSIVATION ON THE PERFORMANCE OF GAAS MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATORS [J].

JEONG, YH ;

CHOI, KH ;

JO, SK ;

KANG, BK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :1176-1180

[10] IMPROVEMENT OF CATASTROPHIC OPTICAL-DAMAGE LEVEL OF ALGAINP VISIBLE LASER-DIODES BY SULFUR TREATMENT [J].

KAMIYAMA, S ;

MORI, Y ;

TAKAHASHI, Y ;

OHNAKA, K .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2595-2597

← 1 2 →