Passivation of the GaAs(100) surface with a vapor-deposited GaS film

被引：12

作者：

Cao, XA ^{[1
]}

Hu, HT ^{[1
]}

Ding, XM ^{[1
]}

Yuan, ZL ^{[1
]}

Dong, Y ^{[1
]}

Chen, XY ^{[1
]}

Lai, B ^{[1
]}

Hou, XY ^{[1
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.590251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vapor-deposited GaS passivating layer is formed on GaAs(100) with alpha-Ga2S3 powder used as a single-source precursor for the deposition. The films grown show near-single-crystal quality, and are characterized by Auger electron spectroscopy and x-ray diffraction spectroscopy. The band-edge discontinuities of the GaS/GaAs heterojunction are determined to be 1.9 eV for the valence band and 0.3 eV for the conduction band, respectively, by ultraviolet photoelectron spectroscopy and electron-energy-loss spectroscopy. It is also observed that the valence-band structure of the GaS overlayer becomes much sharper after annealing. (C) 1998 American Vacuum Society. [S0734-211X(98)04205-X].

引用

页码：2656 / 2659

页数：4

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