Kelvin force microscopy at the second cantilever resonance:: An out-of-vacuum crosstalk compensation setup

被引:20
作者
Diesinger, H. [1 ]
Deresmes, D. [1 ]
Nys, J. -P. [1 ]
Melin, T. [1 ]
机构
[1] CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France
关键词
atomic force microscopy (AFM);
D O I
10.1016/j.ultramic.2008.01.003
中图分类号
TH742 [显微镜];
学科分类号
摘要
We investigate the gap-voltage control loop in a Kelvin force microscopy setup with simultaneous non-contact topography imaging. The Kelvin controller electrostatically excites the second resonance of the cantilever at about 6.3 times the first resonance frequency and adjusts the DC component of the gap voltage to cancel the oscillation amplitude at this frequency, while the non-contact topography imaging is based on a frequency control loop that maintains a constant frequency of the mechanically excited first resonance of the cantilever by adjusting the tip-sample separation. Due to the self-excitation of the first resonance in our setup, it has to be considered that the electrostatic excitation at the second resonance frequency is applied to a closed feedback loop and cannot be considered as a simple superposition to the oscillation at the first resonance frequency. In particular, special care has to be taken about internal capacitive crosstalk between the tip bias and the cantilever deflection output signal. It is shown that such a coupling cannot be corrected by subtraction of a constant offset at the demodulator output since the crosstalk is sent into the self-excitation loop and is multiplied by the closed loop transfer function. We present a circuit that actively compensates, outside the vacuum environment, the internal crosstalk by adding to the deflection output a dephased fraction of the electrostatic excitation signal. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:773 / 781
页数:9
相关论文
共 13 条
[1]   FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].
ALBRECHT, TR ;
GRUTTER, P ;
HORNE, D ;
RUGAR, D .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673
[2]   Amplitude or frequency modulation-detection in Kelvin probe force microscopy [J].
Glatzel, T ;
Sadewasser, S ;
Lux-Steiner, MC .
APPLIED SURFACE SCIENCE, 2003, 210 (1-2) :84-89
[3]   2-DIMENSIONAL SURFACE DOPANT PROFILING IN SILICON USING SCANNING KELVIN PROBE MICROSCOPY [J].
HENNING, AK ;
HOCHWITZ, T ;
SLINKMAN, J ;
NEVER, J ;
HOFFMANN, S ;
KASZUBA, P ;
DAGHLIAN, C .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :1888-1896
[4]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512
[5]   Direct comparison between phase locked oscillator and direct resonance oscillator in the noncontact atomic force microscopy under ultrahigh vacuum [J].
Kim, BI .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (11) :5035-5037
[6]   High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope [J].
Kitamura, S ;
Iwatsuki, M .
APPLIED PHYSICS LETTERS, 1998, 72 (24) :3154-3156
[7]   Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy [J].
Koley, G ;
Spencer, MG .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :337-344
[8]   High-resolution work function imaging of single grains of semiconductor surfaces [J].
Sadewasser, S ;
Glatzel, T ;
Rusu, M ;
Jäger-Waldau, A ;
Lux-Steiner, MC .
APPLIED PHYSICS LETTERS, 2002, 80 (16) :2979-2981
[9]   High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy [J].
Sommerhalter, C ;
Matthes, TW ;
Glatzel, T ;
Jäger-Waldau, A ;
Lux-Steiner, MC .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :286-288
[10]   Kelvin probe force microscopy in ultra high vacuum using amplitude modulation detection of the electrostatic forces [J].
Sommerhalter, C ;
Glatzel, T ;
Matthes, TW ;
Jäger-Waldau, A ;
Lux-Steiner, MC .
APPLIED SURFACE SCIENCE, 2000, 157 (04) :263-268