High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers

被引：47

作者：

Schafer, F ^{[1
]}

Mayer, B ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the carrier confinement on the output characteristics of GaInAs/AlGaAs lasers was investigated. To improve the carrier confinement, AlGaAs/GaAs short-period superlattices were used as quantum well barriers. In comparison to lasers with GaAs barriers the structures with the modified barriers show improved temperature properties at low threshold current densities without deterioration of the internal quantum efficiency (>95%). High characteristic temperatures (T-0) well above 300 K were measured between 20 and 75 degrees C and laser operation up to 238 degrees C could be achieved. The large improvement in T-0 is mainly attributed to the reduced thermionic emission of carriers out of the quantum well due to the increased barrier height and the carrier reflection above the barrier by the short-period superlattice. (C) 1998 American Institute of Physics. [S0003-6951(98)00546-4].

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页码：2863 / 2865

页数：3

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