Direct observation of a fully strained dead layer at Ba0.7Sr0.3TiO3/SrRuO3 interface -: art. no. 062901

被引:31
作者
He, JQ [1 ]
Vasco, E
Jia, CL
Wang, RH
机构
[1] Forschungszentrum Julich GmbH, Inst Festkorperphys, D-52425 Julich, Germany
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Ctr Electron Microscopy, Wuhan 430072, Peoples R China
关键词
D O I
10.1063/1.2008372
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial SrRuO3/Ba0.7Sr0.3TiO3 (BST)/SrRuO3 thin film capacitors were prepared on SrTiO3 substrates by pulsed laser deposition. The structures of stacked BST films with different thicknesses were investigated by transmission electron microscopy. A distinctive layer of about 3 nm of thickness was identified within BST films thicker than 9 nm at the interface with the SrRuO3 bottom electrode. The distinctive layer is misfit dislocation-free showing pseudoconstant lattice parameters. Misfit dislocations are formed at the interface between the distinctive layer and the BST film bulk layer relaxing the latter as the film thickness increases. The effect of the distinctive layer on the system dielectric response is discussed within the framework of an interfacial dead-layer model. (c) 2005 American Institute of Physics.
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