Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

被引：29

作者：

Fan, H. B. ^{[1
]}

Sun, G. S. ^{[2
]}

Yang, S. Y. ^{[1
]}

Zhang, P. F. ^{[1
]}

Zhang, R. Q. ^{[1
]}

Wei, H. Y. ^{[1
]}

Jiao, C. M. ^{[1
]}

Liu, X. L. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhu, Q. S. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2926679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 +/- 0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN. (C) 2008 American Institute of Physics.

引用

页数：3

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