New Mode of Vapor-Liquid-Solid Nanowire Growth

被引:124
作者
Dubrovskii, V. G. [1 ,2 ]
Cirlin, G. E. [1 ,2 ]
Sibirev, N. V. [1 ]
Jabeen, F. [3 ]
Harmand, J. C. [3 ]
Werner, P. [4 ]
机构
[1] St Petersburg Acad Univ, St Petersburg 194021, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] CNRS, LPN, F-91460 Marcoussis, France
[4] Max Planck Inst Mikrostrukturphys, D-10620 Halle, Germany
基金
俄罗斯基础研究基金会;
关键词
Vapor-liquid-solid growth; droplet shape; zinc blende crystal structure; III-V NANOWIRES; ZINC-BLENDE; SEMICONDUCTOR NANOWIRES; GAAS NANOWIRES; SILICON; MECHANISM;
D O I
10.1021/nl104238d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the new mode of the vapor-liquid-solid nanowire growth with a droplet wetting the side-walls and surrounding the nanowire rather than resting on its top. It is shown theoretically that such an unusual configuration happens when the growth is catalyzed by a lower surface energy metal. A model of a nonspherical elongated droplet shape in the wetting case is developed. Theoretical predictions are compared to the experimental data on the Ga-catalyzed growth of GaAs nanowires by molecular beam epitaxy. In particular, it is demonstrated that the experimentally observed droplet shape is indeed nonspherical. The new VLS mode has a major impact on the crystal structure of GaAs nanowires, helping to avoid the uncontrolled zinc blende-wurtzite polytylism under optimized growth conditions. Since the triple phase line nucleation is suppressed on surface energetic grounds, all nanowires acquire pure zinc blende phase along the entire length, as demonstrated by the structural studies of our GaAs nanowires.
引用
收藏
页码:1247 / 1253
页数:7
相关论文
共 40 条
[1]   An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].
Akiyama, T ;
Sano, K ;
Nakamura, K ;
Ito, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278
[2]   Vertical wrap-gated nanowire transistors [J].
Bryllert, T ;
Wernersson, LE ;
Löwgren, T ;
Samuelson, L .
NANOTECHNOLOGY, 2006, 17 (11) :S227-S230
[3]   Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy [J].
Cirlin, G. E. ;
Dubrovskii, V. G. ;
Samsonenko, Yu. B. ;
Bouravleuv, A. D. ;
Durose, K. ;
Proskuryakov, Y. Y. ;
Mendes, Budhikar ;
Bowen, L. ;
Kaliteevski, M. A. ;
Abram, R. A. ;
Zeze, Dagou .
PHYSICAL REVIEW B, 2010, 82 (03)
[4]   Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].
Dick, KA ;
Deppert, K ;
Mårtensson, T ;
Mandl, B ;
Samuelson, L ;
Seifert, W .
NANO LETTERS, 2005, 5 (04) :761-764
[5]   Control of III-V nanowire crystal structure by growth parameter tuning [J].
Dick, Kimberly A. ;
Caroff, Philippe ;
Bolinsson, Jessica ;
Messing, Maria E. ;
Johansson, Jonas ;
Deppert, Knut ;
Wallenberg, L. Reine ;
Samuelson, Lars .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (02)
[6]   Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. .
PHYSICAL REVIEW B, 2008, 77 (03)
[7]   Physical Consequences of the Equivalence of Conditions for the Steady-State Growth of Nanowires and the Nucleation on Triple Phase Line [J].
Dubrovskii, V. G. .
TECHNICAL PHYSICS LETTERS, 2011, 37 (01) :53-57
[8]   Role of nonlinear effects in nanowire growth and crystal phase [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Cirlin, G. E. ;
Bouravleuv, A. D. ;
Samsonenko, Yu. B. ;
Dheeraj, D. L. ;
Zhou, H. L. ;
Sartel, C. ;
Harmand, J. C. ;
Patriarche, G. ;
Glas, F. .
PHYSICAL REVIEW B, 2009, 80 (20)
[9]   Shape modification of III-V nanowires: The role of nucleation on sidewalls [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Cirlin, G. E. ;
Tchernycheva, M. ;
Harmand, J. C. ;
Ustinov, V. M. .
PHYSICAL REVIEW E, 2008, 77 (03)
[10]   Growth kinetics and crystal structure of semiconductor nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Harmand, J. C. ;
Glas, F. .
PHYSICAL REVIEW B, 2008, 78 (23)