Vapor phase self-assembly of molecular gate dielectrics for thin film transistors

被引：62

作者：

DiBenedetto, Sara A.

Frattarelli, David

Ratner, Mark A.

Facchetti, Antonio

Marks, Tobin J.

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 24期

关键词：

D O I：

10.1021/ja801309g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors(OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.

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页码：7528 / +

页数：3

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