Improvement of the thermal stability of silver metallization

被引：64

作者：

Kim, HC ^{[1
]}

Alford, TL ^{[1
]}

机构：

[1] Arizona State Univ, NSF Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 08期

关键词：

D O I：

10.1063/1.1609646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability of Ag(Al) alloy thin films on SiO2 has been investigated and compared to pure Ag thin films on SiO2 substrates. The prevention of Ag agglomeration on the SiO2 layer is a critical issue to improve the thermal stability of Ag metallization. We deposited Ag(Al) alloy thin films on SiO2 and compared them to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry, x-ray diffractometry, optical microscope, and four-point probe. Ag(Al) thin films showed good thermal stability on the SiO2 layer without any diffusion barrier and the Ag alloy thin films were stable up to 600 degreesC for 1 h in vacuum. No agglomeration was found during annealing for 1 h at 600 degreesC in vacuum. The electrical resistivity of the as-deposited Ag (3.1 at. % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600 degreesC for 1 h in vacuum) remained constant due to no occurrence of agglomeration. It is confirmed in this study that the thermal stability of Ag metallization on SiO2 substrates can be enhanced by using Ag(Al) alloy thin films. (C) 2003 American Institute of Physics.

引用

页码：5393 / 5395

页数：3

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