Origin of band gaps in graphene on hexagonal boron nitride

被引：276

作者：

Jung, Jeil ^{[1
]}

DaSilva, Ashley M. ^{[2
]}

MacDonald, Allan H. ^{[2
]}

Adam, Shaffique ^{[1
,3
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Graphene Res Ctr, Singapore 117551, Singapore

[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[3] Yale NUS Coll, Singapore 138614, Singapore

来源：

NATURE COMMUNICATIONS | 2015年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

DIRAC FERMIONS;

D O I：

10.1038/ncomms7308

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene's carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy p-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions.

引用

页数：11

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