Silicon nanoparticles embedded in SiO2 films with visible photoluminescence

被引：35

作者：

Makimura, T ^{[1
]}

Kunii, Y ^{[1
]}

Ono, N ^{[1
]}

Murakami, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 127卷

关键词：

visible photoluminescence; nanoparticles; silicon; silicon dioxide;

D O I：

10.1016/S0169-4332(97)00661-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Applying laser ablation technique, we have synthesized two types of SiO2 films that included nanometer-sized Si particles. One is synthesized by alternative deposition of Si nanoparticle layers and SiO, lavers. The synthesized film exhibits red photoluminescence (PL) with a peak energy below 1.5 eV. The other is a SiO2 film in which Si nanocrystallites precipitate. The films were synthesized by annealing at 1000 degrees C of SiOx films which are formed by laser ablation in diluted O-2 gas. The films exhibit PL with peak energies of 1.5 eV, 2.2 eV and 2.7 eV. We find that there is a narrow range of composition for efficient 1.5-eV PL. (C) 1998 Elsevier Science B.V.

引用

页码：388 / 392

页数：5

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