Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays

A low-power, short-wavelength eight-channel monolithically integrated photoreceiver array, based on SiGe/Si heterojunction bipolar transistors, is demonstrated. The photoreceiver consists of a photodiode, three-stage transimpedance amplifier, and passive elements for feedback, biasing and impedance matching. The photodiode and transistors are grown by molecular beam epitaxy in a single step. The p-i-n photodiode exhibits a responsivity of 0.3A/W and a bandwidth of 0.8 GHz at lambda = 0.88 mum. The three-stage transimpedance amplifier demonstrates a transimpedance gain of 43 dB Omega and a -3 db bandwidth of 5.5 GHz, A single channel monolithically integrated photoreceiver consumes a power of 6 mW and demonstrates an optical bandwidth of 0.8 GHz, Eight-channel photoreceiver arrays are designed for massively parallel applications where low power dissipation and low crosstalk are required. The array is on a 250-mum pitch and can be easily scaled to much higher density, Large signal operation up to 1 Gb/s is achieved with crosstalk less than -26 dB, A scheme for time-to-space division multiplexing is proposed and demonstrated with the photoreceiver array.