Passivation of carbon doping in InGaAs during ECR-CVD of SiNx

被引：11

作者：

Ren, F

Hamm, RA

Lothian, JR

Wilson, RG

Pearton, SJ

机构：

[1] Hughes Research Laboratories, Malibu

[2] University of Florida, Gainesville

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 05期

关键词：

D O I：

10.1016/0038-1101(95)00392-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：763 / 765

页数：3

共 7 条

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[2] INP/IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY MOCVD [J].

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[3]

JALALI B, 1995, INP HBTS GROWTH PROC

[4] COMPARISON OF H+ AND HE+ IMPLANT ISOLATION OF GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[5]

PEARTON SJ, 1992, HYDROGEN CRYSTALLINE

[6] THE ROLE OF HYDROGEN IN CURRENT-INDUCED DEGRADATION OF CARBON-DOPED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

REN, F ;

ABERNATHY, CR ;

CHU, SNG ;

LOTHIAN, JR ;

PEARTON, SJ .

SOLID-STATE ELECTRONICS, 1995, 38 (06) :1137-1141

[7] ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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HONG, BWP ;

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CHOUGH, KB .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (03) :94-96

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