ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：26

作者：

SONG, JI

HONG, BWP

PALMSTROM, CJ

VANDERGAAG, BP

CHOUGH, KB

机构：

[1] Bellcore, Red Bank

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 03期

关键词：

D O I：

10.1109/55.285391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the microwave performance of InP/In0.53Ga0.41As heterojunction bipolar transistors (HBT's) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The f(T) and f(max) of the HBT having two 1.5 x 10 mu m(2) emitter fingers were 175 GHz and 70 GHz, respectively, at I-C = 40 mA and V-CE = 1.5 V. To our knowledge, the f(T) of this device is the highest of any type of bipolar transistors yet reported. These results indicate the great potential of carbon-doped base InP/InGaAs HBT's for high-speed applications.

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页码：94 / 96

页数：3

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