Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump-terahertz-probe experiments

被引：123

作者：

Lui, KPH ^{[1
]}

Hegmann, FA ^{[1
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1375841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the relaxation of photogenerated carriers in radiation-damaged silicon on sapphire using a collinear optical-pump-terahertz-probe arrangement. Carrier densities greater than 10(20) cm(-3) are injected using 400 nm, 100 fs pump pulses, and the change in transmission of the terahertz-probe pulse is measured as a function of pump-probe delay. The time-dependent carrier density is deduced using a thin-film Drude model. A carrier mobility of 422 +/- 17 cm(2)/V s is measured, and single-exponential carrier relaxation times of 4 ps at low fluence and 6 ps at high fluence are observed. (C) 2001 American Institute of Physics.

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页码：3478 / 3480

页数：3

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