A comparison of the X-ray performance of TlBr crystals grown by the Bridgeman-Stockbarger and travelling molten zone methods

被引：22

作者：

Gostilo, V

Owens, A

Bavdaz, M

Lisjutin, I

Peacock, A

Sipila, H

Zatoloka, S

机构：

[1] Balt Sci Instruments, LV-1005 Riga, Latvia

[2] European Space Agcy, Estec, Sci Payload Technol Div, NL-2200 AG Noordwijk, Netherlands

[3] Metorex Int Oy, FIN-02631 Espoo, Finland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 509卷 / 1-3期

关键词：

compound semiconductors; TlBr; X-rays;

D O I：

10.1016/S0168-9002(03)01547-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated at optimal temperature the X-ray detection characteristics of two TlBr crystals by the Traveling Molten Zone (TMZ) technique. The resistivities were typically 1.5 x 10(10) Omega cm at room temperature, increasing to (1.1-1.7) x 10(12) Omegacm at -15degreesC. In the temperature range -0degreesC to -50degreesC, both crystals exhibited mobility-lifetime products of similar to8 x 10(-5) cm(2)V(-1) and -1.5 x 10(-5) cm(2)V(-1), for electrons and holes respectively. From these crystals, two detectors were packaged and X-ray metrology carried out. For the best detector, the measured energy resolutions at an operating temperature of -15degreesC and 500V bias were 1.0 keV at 5.9 keV; 1.1 at 13.9 keV; 2.5 at 59.54 keV; 3.3 keV at 88 keV; 4 keV at 122 keV and 27.7 keV at 662 keV. A comparative analysis of the characteristics of detectors grown by TMZ to those grown by the Bridgeman-Stockbarger method is given. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：47 / 51

页数：5

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