Dielectric constant and current transport for HfO2 thin films on ITO

被引：38

作者：

Jones, MN ^{[1
]}

Kwon, YW ^{[1
]}

Norton, DP ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 02期

关键词：

D O I：

10.1007/s00339-005-3208-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric constant and leakage current mechanisms for HfO2 thin films deposited on indium-tin-oxide using reactive rf sputtering deposition were examined. Indium-tin-oxide was selected as the bottom metal as it is of interest as an electrode in transparent field-effect transistor development. The dielectric constant of HfO2 films was approximately 20 and did not vary significantly with deposition conditions. Temperature-dependent leakage current measurements indicate that Schottky emission is the dominant transport mechanism in films deposited at low temperature and/or low oxygen pressure. The HfO2/indium-tin-oxide barrier height was extracted to be similar to 1.1 +/- 0.2 eV. Films deposited at high temperature and/or oxygen pressure deviate from the Schottky emission model, presumably due to the formation of polycrystalline material with grain boundary conduction.

引用

页码：285 / 288

页数：4

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