Hafnium oxide gate dielectric for strained-Si1-xGex

被引：21

作者：

Maiti, CK ^{[1
]}

Maikap, S ^{[1
]}

Chatterjee, S ^{[1
]}

Nandi, SK ^{[1
]}

Samanta, SK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(03)00219-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin hafnium oxide (HfO2) films have been deposited by rf sputtering on strained-Si0.81Ge0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO2 films has been studied using current-voltage (I-V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole-Frenkel emission takes over at a high electric field. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1995 / 2000

页数：6

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