Epitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 mu m oxide openings prepared by electron beam lithography

被引：38

作者：

Yew, JY ^{[1
]}

Chen, LJ ^{[1
]}

Nakamura, K ^{[1
]}

机构：

[1] NATL NANO DEVICE LAB,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.117108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 mu m oxide openings prepared by electron beam Lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi, epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 degrees C inside contact holes of 0.2 mu m or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi, of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. (C) 1996 American Institute of Physics.

引用

页码：999 / 1001

页数：3

共 14 条

[1] FORMATION OF EPITAXIAL NISI2 OF SINGLE ORIENTATION ON(111) SI INSIDE MINIATURE SIZE OXIDE OPENINGS [J].