Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors

被引：107

作者：

Mathijssen, Simon G. J. ^{[1
,2
]}

Spijkman, Mark-Jan ^{[1
,3
]}

Andringa, Anne-Marije ^{[1
,3
]}

van Hal, Paul A. ^{[1
]}

McCulloch, Iain ^{[4
]}

Kemerink, Martijn ^{[2
]}

Janssen, Rene A. J. ^{[2
]}

de Leeuw, Dago M. ^{[1
,3
]}

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[3] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[4] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 45期

关键词：

THIN-FILM-TRANSISTORS; PROBE FORCE MICROSCOPY;

D O I：

10.1002/adma.201001865

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

引用

页码：5105 / +

页数：6

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