Low-temperature OMCVD of InN thin films from the novel air-stable single-molecule precursor azido{bis[(3-dimethylamino)propyl]}indium, (N-3)In[(CH2)(3)NMe(2)](2)

被引：35

作者：

Fischer, RA

Miehr, A

Metzger, T

Born, E

Ambacher, O

Angerer, H

Dimitrov, R

机构：

[1] TECH UNIV MUNICH,INST ANORGAN CHEM,D-85747 GARCHING,GERMANY

[2] TECH UNIV MUNICH,LEHRSTUHL ANG MINERAL & GEOCHEM,D-85747 GARCHING,GERMANY

[3] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

CHEMISTRY OF MATERIALS | 1996年 / 8卷 / 07期

关键词：

D O I：

10.1021/cm9600642

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hexagonal InN and InGaN are interesting wide-bandgap semiconductors for optoelectronic applications. The first example of an air-stable, fairly volatile, and low melting precursor, (N-3)In[(CH2)(3)NMe(2)](2) (1), to-deposit crystalline InN at low temperatures (350-450 degrees C) is presented.

引用

页码：1356 / &

页数：5

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