Low-temperature OMCVD of InN thin films from the novel air-stable single-molecule precursor azido{bis[(3-dimethylamino)propyl]}indium, (N-3)In[(CH2)(3)NMe(2)](2)

被引:35
作者
Fischer, RA
Miehr, A
Metzger, T
Born, E
Ambacher, O
Angerer, H
Dimitrov, R
机构
[1] TECH UNIV MUNICH,INST ANORGAN CHEM,D-85747 GARCHING,GERMANY
[2] TECH UNIV MUNICH,LEHRSTUHL ANG MINERAL & GEOCHEM,D-85747 GARCHING,GERMANY
[3] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
关键词
D O I
10.1021/cm9600642
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hexagonal InN and InGaN are interesting wide-bandgap semiconductors for optoelectronic applications. The first example of an air-stable, fairly volatile, and low melting precursor, (N-3)In[(CH2)(3)NMe(2)](2) (1), to-deposit crystalline InN at low temperatures (350-450 degrees C) is presented.
引用
收藏
页码:1356 / &
页数:5
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