Postgrowth annealing of (Ga,Mn) As under As capping:: An alternative way to increase TC -: art. no. 112501

被引：47

作者：

Adell, M

Ilver, L

Kanski, J ^{[1
]}

Stanciu, V

Svedlindh, P

Sadowski, J

Domagala, JZ

Terki, F

Hernandez, C

Charar, S

机构：

[1] Chalmers, Dept Expt Phys, SE-41296 Gothenburg, Sweden

[2] Lund Univ, MAX Lab, SE-22100 Lund, Sweden

[3] Uppsala Univ, Dept Engn Sci, SE-75121 Uppsala, Sweden

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[5] Univ Montpellier 2, Grp Etud Semicond CC074, Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.1875746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

相关论文

共 20 条

[1]

ADELL M, UNPUB

[2] Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs [J].

Blinowski, J ;

Kacman, P .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[3] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].

Chiba, D ;

Takamura, K ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022

[4] Mn interstitial diffusion in (Ga,Mn)As [J].

Edmonds, KW ;

Boguslawski, P ;

Wang, KY ;

Campion, RP ;

Novikov, SN ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT ;

Sawicki, M ;

Dietl, T ;

Nardelli, MB ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4

[5] Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures [J].

Johnston-Halperin, E ;

Schuller, JA ;

Gallinat, CS ;

Kreutz, TC ;

Myers, RC ;

Kawakami, RK ;

Knotz, H ;

Gossard, AC ;

Awschalom, DD .

PHYSICAL REVIEW B, 2003, 68 (16)

[6] (Ga,Mn)As as a digital ferromagnetic heterostructure [J].

Kawakami, RK ;

Johnston-Halperin, E ;

Chen, LF ;

Hanson, M ;

Guébels, N ;

Speck, JS ;

Gossard, AC ;

Awschalom, AA .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2379-2381

[7] Annealing-dependent magnetic depth profile in Ga1-xMnxAs -: art. no. 081307 [J].

Kirby, BJ ;

Borchers, JA ;

Rhyne, JJ ;

Velthuis, SGET ;

Hoffmann, A ;

O'Donovan, KV ;

Wojtowicz, T ;

Liu, X ;

Lim, WL ;

Furdyna, JK .

PHYSICAL REVIEW B, 2004, 69 (08)

[8] Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers [J].

Ku, KC ;

Potashnik, SJ ;

Wang, RF ;

Chun, SH ;

Schiffer, P ;

Samarth, N ;

Seong, MJ ;

Mascarenhas, A ;

Johnston-Halperin, E ;

Myers, RC ;

Gossard, AC ;

Awschalom, DD .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2302-2304

[9] Temperature dependence of the conductance in diluted magnetic semiconductors [J].

Lopez-Sancho, M. P. ;

Brey, L. .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 :E1585-E1586

[10] Lattice constant in diluted magnetic semiconductors (Ga,Mn)As -: art. no. 153203 [J].

Masek, J ;

Kudrnovsky, J ;

Máca, F .

PHYSICAL REVIEW B, 2003, 67 (15)