Optical bandgap energy of wurtzite In-rich AlInN alloys

被引：30

作者：

Guo, QX ^{[1
]}

Tanaka, T ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 2B期

关键词：

III-V semiconductors; AlInN; In-rich; absorption spectroscopy; optical bandgap;

D O I：

10.1143/JJAP.42.L141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ternary AlxIn1-xN films were grown on (0001) sapphire substrates by reactive radio-frequency magnetron sputtering with a wide composition range (0 less than or equal to x less than or equal to 0.40) in the low Al composition regime. X-ray diffraction analysis showed that highly caxis-oriented AlInN films with a wurtzite structure were obtained. The bandgap energy of the AlInN ternary was measured by optical absorption spectroscopy. Reasonable agreement for the bandgap energy was found between the experimental data and the theoretical results calculated using the ab initio pseudopotential method.

引用

页码：L141 / L143

页数：3

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