Dissolution and recrystallization of GaN in molten Na

被引:11
作者
Aoki, M
Yamane, H
Shimada, M
Sarayama, S
Iwata, H
Disalvo, FJ
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[3] Ricoh Co Ltd, R&D Ctr, Res & Dev Grp, Dept 1, Natori, Miyagi 9812141, Japan
[4] Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY 14853 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 12期
关键词
GaN; single crystal; dissolution; flux growth; Li3N additives;
D O I
10.1143/JJAP.42.7272
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dissolution mass of GaN in molten Na at 650-800degreesC and 3-5 MPa of N-2 was determined by weight loss of polycrystalline GaN fragments immersed in Na and by chemical analysis of the amount of Ga dissolved, in Na. The dissolution of GaN in Na was equilibrated within 100h and the dissolution mass increased with increasing temperature but decreased with increasing N-2 pressure. It was found that the addition of a small amount of Li3N into the Na melt increased the dissolution mass of GaN. Transparent platelet single crystals of GaN with sizes over 300 mum were grown from nutrient GaN powder by cooling a Na solution with a Li3N additives from 800degreesC to 700degreesC at 1degreesC/h.
引用
收藏
页码:7272 / 7275
页数:4
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