A novel structural amorphous fluoropolymer film with an ultra-low dielectric constant

Amorphous fluoropolymer (AF) thin Nm (0.9-1 mum), which has no-pinhole and uniform surface and numerous pores in the matrix, has been prepared from a solution of Teflon AF 1600 by a spin-coating method. Thermal annealing at 400 degreesC for 30 min does not cause obvious deterioration of the film surface morphology. The mechanism for the formation of the film with a novel structure is discussed. By capacitance-voltage (C-V) and current-voltage (I-V) measurements, the electricity properties of the AF film are defined. The substitution of SiO2 (k = 4.0) with the AF film (k = 1.57) will decrease the resistance-capacitance (RC) delay by about 61%. (C) 2001 Elsevier Science B.V. All rights reserved.