Field-emission enhancement of molybdenum oxide nanowires with nanoprotrusions

被引:17
作者
Khademi, Ali [1 ]
Azimirad, Rouhollah [2 ]
Nien, Yung-Tang [3 ]
Moshfegh, Alireza Z. [1 ,4 ]
机构
[1] Sharif Univ Technol, Dept Phys, Tehran, Iran
[2] Malek Ashtar Univ Technol, Inst Phys, Tehran, Iran
[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[4] Sharif Univ Technol, Inst Nanosci & Nanotechnol, Tehran, Iran
关键词
Field emission; MoO2; nanowires; Nanoprotrusions; Thermal vapor deposition; Nanoelectronics; LOW-TEMPERATURE SYNTHESIS; MOO2; NANORODS; GROWTH; ARRAYS; FILMS; NANOBELTS; SUBSTRATE; VACUUM; XPS;
D O I
10.1007/s11051-010-0009-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The field-emission properties of molybdenum oxide nanowires grown on a silicon substrate and its emission performance in various vacuum gaps are reported in this article. A new kind of molybdenum oxides named nanowires with nanoscale protrusions on their surfaces were grown by thermal vapor deposition with a length of similar to 1 mu m and an average diameter of similar to 50 nm. The morphology, structure, composition and chemical states of the prepared nanostructures were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). According to XRD, XPS, and TEM analyses, the synthesized samples were composed of MoO2 nanowires formed over a thin layer of crystalline Mo4O11. TEM observation revealed that these nanowires have some nanoscale protrusion on their surface. These nanoprotrusions resulted in enhancement of field-emission properties of nanowires comprising nanoprotrusions. The turn-on emission field and the enhancement factor of this type of nanostructures were measured 0.2 V/mu m and 42991 at the vacuum gap of 300 mu m, respectively. These excellent emission properties are attributed to the special structure of the nanowires that have potential for utilizing in vacuum nanoelectronic and microelectronic applications.
引用
收藏
页码:115 / 125
页数:11
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