Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

被引:154
作者
Dubrovskii, V. G. [1 ,2 ]
Sibirev, N. V. [1 ]
机构
[1] Russian Acad Sci Res & Educ, St Petersburg Phys Technol Ctr, St Petersburg 195220, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1103/PhysRevB.77.035414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theoretical model for the growth thermodynamics of nanowires in different epitaxial techniques is presented, which enables one to determine morphological and structural configurations of the nanowire ensemble with minimum formation energy. It is demonstrated that nanowire ensembles are metastable and controlled entirely by the growth kinetics. The model is applied to studying the polytypism of zinc blende III-V nanowires. It is shown that structural transition should occur within a certain domain of radii and vapor supersaturations. Different polytypes between wurtzite and zinc blende structures with periodicity up to 18 layers are analyzed. It is demonstrated that 4H polytype has the lowest formation energy and the largest critical radius of transition amongst all polytypes. Numerical estimates predict the critical radius of structural phase transition of 17 - 25 nm for GaAs nanowires growing on the GaAs(111)B substrate.
引用
收藏
页数:8
相关论文
共 32 条
[21]   Electrical detection of single viruses [J].
Patolsky, F ;
Zheng, GF ;
Hayden, O ;
Lakadamyali, M ;
Zhuang, XW ;
Lieber, CM .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2004, 101 (39) :14017-14022
[22]   Surface diffusion effects on growth of nanowires by chemical beam epitaxy [J].
Persson, A. I. ;
Froberg, L. E. ;
Jeppesen, S. ;
Bjork, M. T. ;
Samuelson, L. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[23]   Solid-phase diffusion mechanism for GaAs nanowire growth [J].
Persson, AI ;
Larsson, MW ;
Stenström, S ;
Ohlsson, BJ ;
Samuelson, L ;
Wallenberg, LR .
NATURE MATERIALS, 2004, 3 (10) :677-681
[24]   Gallium nitride-based nanowire radial heterostructures for nanophotonics [J].
Qian, F ;
Li, Y ;
Gradecak, S ;
Wang, DL ;
Barrelet, CJ ;
Lieber, CM .
NANO LETTERS, 2004, 4 (10) :1975-1979
[25]   Sawtooth faceting in silicon nanowires [J].
Ross, FM ;
Tersoff, J ;
Reuter, MC .
PHYSICAL REVIEW LETTERS, 2005, 95 (14)
[26]  
ROSSLER U, 2006, GROUP 4 ELEMENTS 4 4, V41
[27]   Silicon nanowhiskers grown on ⟨111⟩Si substrates by molecular-beam epitaxy [J].
Schubert, L ;
Werner, P ;
Zakharov, ND ;
Gerth, G ;
Kolb, FM ;
Long, L ;
Gösele, U ;
Tan, TY .
APPLIED PHYSICS LETTERS, 2004, 84 (24) :4968-4970
[28]   Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy [J].
Soshnikov, I. P. ;
Cirlin, G. E. ;
Tonkikh, A. A. ;
Nevedomskii, V. N. ;
Samsonenko, Yu. B. ;
Ustinov, V. M. .
PHYSICS OF THE SOLID STATE, 2007, 49 (08) :1440-1445
[29]   Atomic structure of MBE-Grown GaAs nanowhiskers [J].
Soshnikov, IP ;
Cirlin, GÉ ;
Tonkikh, AA ;
Samsonenko, YB ;
Dubovskii, VG ;
Ustinov, VM ;
Gorbenko, OM ;
Litvinov, D ;
Gerthsen, D .
PHYSICS OF THE SOLID STATE, 2005, 47 (12) :2213-2218
[30]  
Steinberger I. T., 1983, Progress in Crystal Growth and Characterization, V7, P7, DOI 10.1016/0146-3535(83)90029-1