LiGaO2 single crystal as a lattice-matched substrate for hexagonal GaN thin films

被引：22

作者：

Ishii, T ^{[1
]}

Tazoh, Y ^{[1
]}

Miyazawa, S ^{[1
]}

机构：

[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

LiGaO2; GaN; substrate; epitaxial growth; thermal expansion coefficient;

D O I：

10.1016/S0022-0248(98)00232-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The thermal expansion coefficient of a nearly lattice-matched substrate LiGaO2 was investigated by dilatometry and the thermal expansion coefficients on the LiGaO2 (0 0 1)plane are 11.0 x 10(-6)/K along the [0 1 0] axis and 1.7 x 10(-6)/K along the [1 0 0] axis. The strong anisotropy leads us to conclude that both the compressive and tensile strains are induced in the GaN thin film grown on the (0 0 1) LiGaO2 substrate. The growth features of the GaN thin film were different on each side of the LiGaO2 substrate with a single domain. The results suggest that both lattice matching and polarity play an important role in the GaN epitaxial growth on the LiGaO2 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：208 / 212

页数：5

共 9 条

[1] LiGaO2 single crystals for a substrate of hexagonal GaN thin films [J].