Analysis and design considerations of three-dimensional vector accelerometer using SOI structure for wide temperature range

被引：30

作者：

Takao, H ^{[1
]}

Matsumoto, Y ^{[1
]}

Seo, H ^{[1
]}

Ishida, M ^{[1
]}

Nakamura, T ^{[1
]}

机构：

[1] YEUNGNAM UNIV,DEPT ELECT ENGN,GYONSAN GYONGBUK 712749,SOUTH KOREA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 55卷 / 2-3期

关键词：

accelerometers; SOI technology; 3-D detection; thermal residual stress; FEM simulation;

D O I：

10.1016/S0924-4247(97)80062-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature and output characteristics of a three-dimensional vector accelerometer using silicon on insulator (SOI) structure are studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method (FEM) simulation program ANSYS, and the influence of the thermal stress on the TCO is estimated with the obtained expressions. Experimental results agree well with these theoretical results. Design considerations that enable the accelerometer to have desirable characteristics are discussed with reference to the expressions and the results of FEM simulation.

引用

页码：91 / 97

页数：7

共 9 条

[1]

[Anonymous], 11 SENS S

[2] METALLURGICAL TOPICS IN SILICON DEVICE INTERCONNECTIONS - THIN-FILM STRESSES [J].

DHEURLE, FM .

INTERNATIONAL MATERIALS REVIEWS, 1989, 34 (02) :53-68

[3] PIEZORESISTANCE EFFECT OF SILICON [J].

KANDA, Y .

SENSORS AND ACTUATORS A-PHYSICAL, 1991, 28 (02) :83-91

[4] TEMPERATURE SENSITIVITY IN SILICON PIEZORESISTIVE PRESSURE TRANSDUCERS [J].

KIM, SC ;

WISE, KD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :802-810

[5] HIGH-TEMPERATURE PRESSURE SENSOR USING DOUBLE SOI STRUCTURES WITH 2 AL2O3 FILMS [J].

LEE, YT ;

SEO, HD ;

ISHIDA, M ;

KAWAHITO, S ;

NAKAMURA, T .

SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) :59-64

[6] STRESS-ANALYSIS OF SIO2/SI BIMETAL EFFECT IN SILICON ACCELEROMETERS AND ITS COMPENSATION [J].

MURO, H ;

KANEKO, H ;

KIYOTA, S ;

FRENCH, PJ .

SENSORS AND ACTUATORS A-PHYSICAL, 1992, 34 (01) :43-49

[7]

Takao H., 1995, 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Digest of Technical Papers (IEEE Cat. No.95TH8173), P683

[8]

TSCHAN T, 1992, SENSOR MATER, V3, P189

[9] A NOVEL SILICON ACCELEROMETER WITH A SURROUNDING MASS STRUCTURE [J].

YAMADA, K ;

HIGUCHI, K ;

TANIGAWA, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :308-311

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