Structural characterization of ZnO films grown on SiO2 by the RF magnetron sputtering

被引：46

作者：

Kim, KS ^{[1
]}

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Nam Ku, Inchon 402751, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 334卷 / 3-4期

关键词：

RF magnetron sputtering; ZnO; annealing; thin films; X-ray diffraction; scanning electron microscopy;

D O I：

10.1016/S0921-4526(03)00096-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have deposited the ZnO thin films on SiO2 substrate using RF magnetron sputtering method and have investigated the effect of annealing on the structural quality of ZnO films in the range of 600-1050degreesC. Annealing at higher temperature was found to enhance the c-axis orientation and the grain size of ZnO films. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：343 / 346

页数：4

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