Rapid Microwave Preparation of Thermoelectric TiNiSn and TiCoSb Half-Heusler Compounds

被引:127
作者
Birkel, Christina S. [1 ,2 ]
Zeier, Wolfgang G. [3 ,4 ]
Douglas, Jason E. [2 ,5 ]
Lettiere, Bethany R. [2 ]
Mills, Carolyn E. [6 ]
Seward, Gareth [7 ]
Birkel, Alexander [8 ]
Snedaker, Matthew L. [1 ]
Zhang, Yichi [1 ]
Snyder, G. Jeffrey [3 ]
Pollock, Tresa M. [2 ,5 ]
Seshadri, Ram [1 ,2 ,5 ]
Stucky, Galen D. [1 ,5 ]
机构
[1] Univ Calif Santa Barbara, Dept Chem & Biochem, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA
[3] CALTECH, Pasadena, CA 91125 USA
[4] Johannes Gutenberg Univ Mainz, Inst Anorgan Chem & Analyt Chem, DE-55099 Mainz, Germany
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[6] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[7] Univ Calif Santa Barbara, Dept Earth Sci, Santa Barbara, CA 93106 USA
[8] Univ Calif Santa Barbara, Mitsubishi Chem Ctr Adv Mat, Santa Barbara, CA 93106 USA
关键词
Heusler; intermetallics; microwave synthesis; thermoelectrics; TiNiSn; TiCoSb; MGAGAS; ZR;
D O I
10.1021/cm3011343
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The 18-electron ternary intermetallic systems TiNiSn and TiCoSb are promising for applications as high-temperature thermoelectrics and comprise earth-abundant, and relatively nontoxic elements. Heusler and half-Heusler compounds are usually prepared by conventional solid state methods involving arc-melting and annealing at high temperatures for an extended period of time. Here, we report an energy-saving preparation route using a domestic microwave oven, reducing the reaction time significantly from more than a week to one minute. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds. The initial preparation is followed by a densification step involving hot-pressing, which reduces the amount of secondary phases, as verified by synchrotron X-ray diffraction, leading to the desired half-Heusler compounds, demonstrating that hot-pressing should be treated as part of the preparative process. For TiNiSn, high thermoelectric power factors of 2 mW/mK(2) at temperatures in the 700 to 800 K range, and zT values of around 0.4 are found, with the microwave-prepared sample displaying somewhat superior properties to conventionally prepared half-Heuslers due to lower thermal conductivity. The TiCoSb sample shows a lower thermoelectric figure of merit when prepared using microwave methods because of a metallic second phase.
引用
收藏
页码:2558 / 2565
页数:8
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