Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture

被引：26

作者：

Temple-Boyer, P

Hajji, B

Alay, JL

Morante, JR

Martinez, A

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Barcelona, Fac Fis, LEME, E-08028 Barcelona, Spain

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

LPCVD; silicon oxynitride; optical; structural properties and mechanical properties;

D O I：

10.1016/S0924-4247(98)00344-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Varied silicon oxynitride SiOxNy films are grown by low pressure chemical vapour deposition (LPCVD) from silane SiH4, nitrous oxide N2O and ammonia NH3 by adjusting the N2O/NH3 gas flow ratio. Film thicknesses and refractive indexes are measured by ellipsometry and profilometry, The SiOxNy stoichiometries are characterized by X-ray photoelectron spectroscopy (XPS) and the results are compared to the Bruggeman theory applied to the SiO2/Si3N4 heterogeneous medium. Film residual stresses are finally characterized by profilometry through wafer curvature measurements. From compressive to tensile stress values are obtained, evidencing the existence of a no-stress oxynitride film. Such phenomena are related to the SiOxNy stoichiometry and explained by considering the deposition mechanisms of the SiH4/N2O/NH3 gaseous mixture and the thermo-mechanical properties of silicon oxynitride. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：52 / 55

页数：4

共 13 条

[1] OPTICAL AND STRUCTURAL-PROPERTIES OF SIOX AND SINX MATERIALS [J].