Heterogeneous materials integration: compliant substrates to active device and materials packaging

被引:4
作者
Brown, AS [1 ]
Doolittle, WA [1 ]
Jokerst, NM [1 ]
Kang, S [1 ]
Huang, S [1 ]
Seo, SW [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Microelect Res Ctr, Atlanta, GA 30332 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 87卷 / 03期
关键词
heterogeneous integration; compliant substrates;
D O I
10.1016/S0921-5107(01)00730-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The drive for the heterogeneous integration of materials has led to significant advances in materials and device processing, and in the understanding of defect production and control during epitaxy. Heterogeneous integration is driven by microelectronic and packaging trends, and the advent of new materials, such as GaN, that do not possess native substrates. During the last decade, these objectives led to research in the development of compliant substrates. While the ideal compliant substrate concept and implementation may be flawed, this research has certainly advanced materials integration technology. This paper will provide an overview of recent results in compliant substrate experiments and interpretation, and the related advancement of materials and device integration and packaging deriving from some of this research. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:317 / 322
页数:6
相关论文
共 41 条
[1]  
[Anonymous], UNPUB
[2]   Compliant substrate technology: Status and prospects [J].
Brown, AS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2308-2312
[3]   The growth of GaN on lithium gallate (LiGaO2) substrates for material integration [J].
Brown, AS ;
Doolittle, WA ;
Kang, SB ;
Shen, JJ ;
Wang, ZL ;
Dai, Z .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (07) :894-896
[4]   ALIGNABLE EPITAXIAL LIFTOFF OF GAAS MATERIALS WITH SELECTIVE DEPOSITION USING POLYIMIDE DIAPHRAGMS [J].
CAMPERIGINESTET, C ;
HARGIS, M ;
JOKERST, N ;
ALLEN, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (12) :1123-1126
[5]   Metastability modeling of compliant substrate critical thickness using experimental strain relief data [J].
CarterComan, C ;
BicknellTassius, R ;
Brown, AS ;
Jokerst, NM .
APPLIED PHYSICS LETTERS, 1997, 71 (10) :1344-1346
[6]   A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates [J].
CarterComan, C ;
Brown, AS ;
Metzger, RA ;
Jokerst, NM ;
Pickering, J ;
Bottomley, LA .
APPLIED PHYSICS LETTERS, 1997, 71 (19) :2773-2775
[7]   Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology [J].
CarterComan, C ;
Brown, AS ;
Jokerst, NM ;
Dawson, DE ;
BicknellTassius, R ;
Feng, ZC ;
Rajkumar, KC ;
Dagnall, G .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (07) :1044-1048
[8]   Strain relaxation of InxGa1-xAs during lateral oxidation of underlying AlAs layers [J].
Chavarkar, P ;
Zhao, L ;
Keller, S ;
Fisher, A ;
Zheng, C ;
Speck, JS ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 1999, 75 (15) :2253-2255
[9]   MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications [J].
Doolittle, WA ;
Kang, SB ;
Brown, A .
SOLID-STATE ELECTRONICS, 2000, 44 (02) :229-238
[10]   Dislocation-free InSb grown on GaAs compliant universal substrates [J].
Ejeckam, FE ;
Seaford, ML ;
Lo, YH ;
Hou, HQ ;
Hammons, BE .
APPLIED PHYSICS LETTERS, 1997, 71 (06) :776-778