(110)strained-SOI n-MOSFETs with higher electron mobility

被引：29

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Tezuka, T ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, ASET, MIRAI Project, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 04期

关键词：

CMOS; mobility; (110) surface orientation; SiGe; SOI; strained-Si;

D O I：

10.1109/LED.2003.810876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have recently developed (110)-surface strained silicon-on-insulator (SOI) n-MOSFETs. The strained-silicon (Si) layer with the strain of about 0.6% has been fabricated on a relaxed SiGe-on-insulator (SGOI) structure with the germanium (Ge) content of 25%. The electron mobility characteristics along the various current directions have been experimentally studied and compared to those of (100)- and (110)-surface unstrained-bulk MOSFETs. We have demonstrated, for the first time, that the electron mobility of (110) strained-SOI MOSFETs is enhanced, compared to that of (110) unstrained-bulk MOSFETs. The electron mobility enhancement depends on the current-flow directions, and the maximum enhancement factor amounts to 23% along the (001) direction. As a result, the electron mobility ratio of (110) strained-SOI MOSFETs to (100) universal mobility is 81% at maximum, whereas the ratio of (110) unstrained-bulk MOSFETs is only 66%. Therefore, (110) strained-SOI devices are also promising candidates for future high-performance CMOS.

引用

页码：266 / 268

页数：3

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