Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime

被引：22

作者：

Aono, H ^{[1
]}

Murakami, E ^{[1
]}

Okuyama, K ^{[1
]}

Nishida, A ^{[1
]}

Minami, M ^{[1
]}

Ooji, Y ^{[1
]}

Kubota, K ^{[1
]}

机构：

[1] Renesas Technol Corp, Ibaraki 3128504, Japan

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期

关键词：

D O I：

10.1016/j.microrel.2004.12.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative Bias Temperature Instability of pMOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (E-ox) is expressed as a power-law of E-ox. We propose new empirical and kinetic models. The E-ox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior. (c) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1109 / 1114

页数：6

共 16 条

[1]

Alam MA, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P345

[2] Dynamic NBTI of pMOS transistors and its impact on device lifetime [J].