Ultraviolet AlGaN multiple-quantum-well laser diodes

被引：84

作者：

Kneissl, M ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Miyashita, N ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1585135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 mum. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm(2) have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%. (C) 2003 American Institute of Physics.

引用

页码：4441 / 4443

页数：3

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