A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube

被引：62

作者：

Son, Jong Yeog ^{[2
]}

Ryu, Sangwoo ^{[2
]}

Park, Yoon-Cheol ^{[2
]}

Lim, Yun-Tak ^{[3
]}

Shin, Yun-Sok ^{[2
]}

Shin, Young-Han ^{[1
]}

Jang, Hyun Myung ^{[2
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Pohang 790784, South Korea

来源：

ACS NANO | 2010年 / 4卷 / 12期

关键词：

ferroelectric polymer nanodot; carbon nanotube; field-effect transistor; nonvolatile memory device; FIELD-EFFECT TRANSISTORS; NANOSTRUCTURES; COPOLYMERS; MECHANISM; ARRAYS;

D O I：

10.1021/nn1021296

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SWOT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.

引用

页码：7315 / 7320

页数：6

共 25 条

[1] Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].

Ahn, CH ;

Tybell, T ;

Antognazza, L ;

Char, K ;

Hammond, RH ;

Beasley, MR ;

Fischer, O ;

Triscone, JM .

SCIENCE, 1997, 276 (5315) :1100-1103

[2] Patterning and switching of nano-size ferroelectric memory cells [J].

Alexe, M ;

Harnagea, C ;

Visinoiu, A ;

Pignolet, A ;

Hesse, D ;

Gösele, U .

SCRIPTA MATERIALIA, 2001, 44 (8-9) :1175-1179

[3] Logic circuits with carbon nanotube transistors [J].

Bachtold, A ;

Hadley, P ;

Nakanishi, T ;

Dekker, C .

SCIENCE, 2001, 294 (5545) :1317-1320

[4] Dip-Pen-Nanolithographic Patterning of Metallic, Semiconductor, and Metal Oxide Nanostructures on Surfaces [J].

Basnar, Bernhard ;

Willner, Itamar .

SMALL, 2009, 5 (01) :28-44

[5] Carbon nanotubes - the route toward applications [J].

Baughman, RH ;

Zakhidov, AA ;

de Heer, WA .

SCIENCE, 2002, 297 (5582) :787-792

[6] Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor [J].

Fu, Wangyang ;

Xu, Zhi ;

Bai, Xuedong ;

Gu, Changzhi ;

Wang, Enge .

NANO LETTERS, 2009, 9 (03) :921-925

[7] FERROELECTRIC PROPERTIES OF VINYLIDENE FLUORIDE COPOLYMERS [J].

FURUKAWA, T .

PHASE TRANSITIONS, 1989, 18 (3-4) :143-211

[8] Carbon nanotubes as Schottky barrier transistors [J].

Heinze, S ;

Tersoff, J ;

Martel, R ;

Derycke, V ;

Appenzeller, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (10)

[9] Identifying the mechanism of biosensing with carbon nanotube transistors [J].

Heller, Iddo ;

Janssens, Anne M. ;

Mannik, Jaan ;

Minot, Ethan D. ;

Lemay, Serge G. ;

Dekker, Cees .

NANO LETTERS, 2008, 8 (02) :591-595

[10]

Hu ZJ, 2009, NAT MATER, V8, P62, DOI [10.1038/nmat2339, 10.1038/NMAT2339]

← 1 2 3 →