Preparation of perovskite, Pb(Zr, Ti)O3 thin-films on YSZ(111)/Si(111) substrates by post-deposition annealing

被引：14

作者：

Kim, JD ^{[1
]}

Hana, S ^{[1
]}

Kawagoe, S ^{[1
]}

Sasaki, K ^{[1
]}

Hata, T ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9208667, Japan

来源：

THIN SOLID FILMS | 2001年 / 385卷 / 1-2期

关键词：

YSZ; perovskite PZT; quasi-metallic mode reactive sputtering (QMMRS); (ZrTi plus %PbO) composite target; post-deposition annealing; ferroelectric;

D O I：

10.1016/S0040-6090(00)01889-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Perovskite Pb(Zr, Ti)O-3 [PZT] thin-films on yttria-stabilized zirconia [YSZ] (111)/Si(lll) substrates were prepared at various growth temperatures by quasi-metallic mode reactive sputtering (QMMRS) system using a (ZrTi + x%PbO) composite target. The surface of the PZT film deposited on a YSZ(111)/Si(lll) substrate, however, revealed many holes (no growth region of PZT film). These holes could be eliminated by using a post-deposition annealing process. Perovskite Pb(Zr, Ti)O-3 thin films were obtained by an annealing process at temperatures of approximately 600 degreesC in an oxygen gas atmosphere for I h. Moreover, ferroelectric properties were observed on Pb(Zr, Ti)O-3 thin films/YSZ(111)/Si(lll) structure. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：293 / 297

页数：5

共 14 条

[1] NEW METHOD TO CONTROL COMPOSITION RATIO OF ALLOY-FILMS BY COMPRESSED MAGNETIC-FIELD MAGNETRON SPUTTERING TECHNIQUE
HATA, T
KAMIDE, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2154 - 2158
[2] REDUCTION OF INTERNAL-STRESS BY COMPOSITIONAL GRADIENT LAYER INSERTED BETWEEN TISI2 AND SI
HATA, T
TSUCHITANI, M
KAMIYA, K
HORITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2297 - L2300
[3] Heteroepitaxial growth of YSZ films on Si(100) substrate by using new metallic mode of reactive sputtering
Hata, T
Nakano, S
Masuda, Y
Sasaki, K
Haneda, Y
Wasa, K
[J]. VACUUM, 1998, 51 (04) : 583 - 590
[4] Thickness dependence of material properties of epitaxial Pb(ZrxTi1-x)O3 films on Ir/(100) (ZrO2)1-x(Y2O3)x/(100)Si structures
Horii, S
Yokoyama, S
Nakajima, H
Horita, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5378 - 5382
[5] HIGH-RATE REACTIVE SPUTTER DEPOSITION OF ALUMINUM-OXIDE
JONES, F
LOGAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1240 - 1247
[6] Target for a Pb(Zr,Ti)O3 thin film deposited at a low temperature using a quasi-metallic mode of reactive sputtering
Kim, JD
Kawagoe, S
Sasaki, K
Hata, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6882 - 6886
[7] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF METAL-FERROELECTRIC BAMGF4-SILICON CAPACITOR BY RAPID THERMAL ANNEALING
KIM, KH
KIM, JD
ISHIWARA, H
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3143 - 3145
[8] THE DIELECTRIC-PROPERTIES OF YTTRIA-STABILIZED ZIRCONIA
LANAGAN, MT
YAMAMOTO, JK
BHALLA, A
SANKAR, SG
[J]. MATERIALS LETTERS, 1989, 7 (12) : 437 - 440
[9] Moll J., 1963, IEEE Trans. Electron Devices, V10, P338, DOI DOI 10.1109/T-ED.1963.15245
[10] Growth dependence of reactively sputtered yttria-stabilized zirconia on Si(100), (110), (111) substrates
Nagashima, M
Nakano, S
Sasaki, K
Hata, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (1AB): : L74 - L77

← 1 2 →