Improved Linearity for Low-Noise Applications in 0.25-μm GaN MISHEMTs Using ALD Al2O3 as Gate Dielectric

被引：60

作者：

Liu, Z. H. ^{[1
,2
]}

Ng, G. I. ^{[1
,2
]}

Arulkumaran, S. ^{[2
]}

Maung, Y. K. T. ^{[2
]}

Teo, K. L. ^{[2
]}

Foo, S. C. ^{[2
]}

Sahmuganathan, V. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Al2O3; atomic-layer-deposited (ALD); GaN; high-electron-mobility transistor (HEMT); linearity; noise;

D O I：

10.1109/LED.2010.2051136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improved device linearity for low-noise applications has been demonstrated in 0.25-mu m AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) Al2O3 as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN HEMTs. Two-tone intermodulation measurement shows that the MISHEMT has a higher value of third-order intercept (IP3). The improved device linearity suggests that the ALD Al2O3/AlGaN/GaN MISHEMT on high-resistivity silicon substrate is promising for high-linearity low-noise amplifier applications.

引用

页码：803 / 805

页数：3

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