Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF4)/oxygen (O2) to improve the performance of organic light-emitting diodes

被引:45
作者
Chan, IM [1 ]
Hong, FCN [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
关键词
optoelectronic device; indium tin oxide; plasma processing and deposition;
D O I
10.1016/S0040-6090(03)01197-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of various gases employed for plasma treatments of indium-tin oxide (ITO) anode surfaces have been studied on the performance of organic light-emitting diode (OLED) devices. Compared with those using pure oxygen (O-2) or pure carbon tetrafluoride (CF4), the plasma treatment of the ITO surface using CF4/O-2 mixture significantly improved the OLED device performance by enhancing the hole injections from the anode. The effects of the CF4/O-2 ratios and the pressure of the plasma treatments were also studied. X-Ray photoelectron spectroscopy (XPS) results indicated that the carbon contaminants were more efficiently removed by CF4/O-2 mixture plasma from the ITO surface than the conventional O-2 plasma. XPS results also suggested that the fluorine bonded directly to indium or tin on the ITO surface effectively reduced the hole injection barrier, improving the device performance. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:254 / 259
页数:6
相关论文
共 18 条
[1]   MOLECULAR DESIGN OF HOLE TRANSPORT MATERIALS FOR OBTAINING HIGH DURABILITY IN ORGANIC ELECTROLUMINESCENT DIODES [J].
ADACHI, C ;
NAGAI, K ;
TAMOTO, N .
APPLIED PHYSICS LETTERS, 1995, 66 (20) :2679-2681
[2]   Electroluminescence: enhanced injection using ITO electrodes coated with a self assembled monolayer [J].
Appleyard, SFJ ;
Willis, MR .
OPTICAL MATERIALS, 1998, 9 (1-4) :120-124
[3]   Polymeric anodes for improved polymer light-emitting diode performance [J].
Carter, SA ;
Angelopoulos, M ;
Karg, S ;
Brock, PJ ;
Scott, JC .
APPLIED PHYSICS LETTERS, 1997, 70 (16) :2067-2069
[4]   Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode [J].
Chan, IM ;
Hsu, TY ;
Hong, FC .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1899-1901
[5]   Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes [J].
Choi, B ;
Yoon, H ;
Lee, HH .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :412-414
[6]   Effect of a plasma treatment of ITO on the performance of organic electroluminescent devices [J].
Furukawa, K ;
Terasaka, Y ;
Ueda, H ;
Matsumura, M .
SYNTHETIC METALS, 1997, 91 (1-3) :99-101
[7]   Lowering of operational voltage of organic electroluminescent devices by coating indium-tin-oxide electrodes with a thin CuOx layer [J].
Hu, WP ;
Manabe, K ;
Furukawa, T ;
Matsumura, M .
APPLIED PHYSICS LETTERS, 2002, 80 (15) :2640-2641
[8]   Anode modification in organic light-emitting diodes by low-frequency plasma polymerization of CHF3 [J].
Hung, LS ;
Zheng, LR ;
Mason, MG .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :673-675
[9]   Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface [J].
Ishii, M ;
Mori, T ;
Fujikawa, H ;
Tokito, S ;
Taga, Y .
JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1165-1167
[10]   Improved operational stability of polyfluorene-based organic light-emitting diodes with plasma-treated indium-tin-oxide anodes [J].
Kim, JS ;
Friend, RH ;
Cacialli, F .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3084-3086