Very large continuous-wave-laser-induced optical absorption in porous silicon films: Evidence for thermal effects

被引：22

作者：

Koyama, H ^{[1
]}

Fauchet, PM ^{[1
]}

机构：

[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 22期

关键词：

D O I：

10.1063/1.122737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very large optical absorption increase induced by continuous-wave laser irradiation is reported for free-standing porous silicon films oxidized at 800-950 degrees C. A maximum reversible optical-density change of 2.5 is obtained with a pump laser intensity of similar to 20 W/cm(2). The induced absorption is found to be strongly decreased when the sample is attached to materials with a higher thermal conductivity. The experimental results can be satisfactory fitted with an empirical formula for the thermally induced absorption increase in bulk crystalline Si. These results strongly suggest that the observed nonlinearity is originating from thermally induced band gap shrinking in Si micro/nanostructures. (C) 1998 American Institute of Physics. [S0003-6951(98)02148-2].

引用

页码：3259 / 3261

页数：3

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