Polarization fields in (Zn,Cd)O/ZnO quantum well structures

被引:27
作者
Kalusniak, S. [1 ]
Sadofev, S. [1 ]
Puls, J. [1 ]
Wuensche, H. J. [1 ]
Henneberger, F. [1 ]
机构
[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.77.113312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The presence of polarization-induced electric fields of some 10(8) V/m in (Zn, Cd)O/ZnO quantum well structures is uncovered by a low-energy shift of the photoluminescence of several 100 meV as well as a dramatic increase of the lifetime from the sub-ns to the 100 mu s time scale when the well width increases from 1.2 to 5.4 nm. Effective screening of these fields by photogenerated carriers occurs already at moderate optical excitation in the 10 kW/cm(2) range.
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页数:4
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