Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy

被引：133

作者：

Sadofev, S. ^{[1
]}

Blumstengel, S. ^{[1
]}

Cui, J. ^{[1
]}

Puls, J. ^{[1
]}

Rogaschewski, S. ^{[1
]}

Schaefer, P. ^{[1
]}

Henneberger, F. ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

FILMS; ZNO; DEPOSITION;

D O I：

10.1063/1.2388250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-phase ZnCdO alloys with a band gap extending from the violet to yellow spectral range are fabricated by molecular beam epitaxy using extremely low growth temperatures in conjunction with O-rich growth conditions. The Cd concentration can be systematically adjusted via the Cd/Zn beam pressure ratio. Despite growth temperatures as low as 150 degrees C, layer-by-layer growth is accomplished allowing for the preparation of ZnCdO/ZnO quantum well structures. Both epilayers and quantum wells exhibit strong band-gap-related emission at room temperature in the whole composition range. (c) 2006 American Institute of Physics.

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页数：3

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