Measurement of Zn0.95Cd0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy -: art. no. 192106

被引：47

作者：

Chen, JJ

Ren, F

Li, YJ

Norton, DP

Pearton, SJ ^{[1
]}

Osinsky, A

Dong, JW

Chow, PP

Weaver, JF

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2128477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of Zn0.95Cd0.05O/ZnO heterostructures grown by rf plasma-enhanced molecular-beam epitaxy. A value of Delta E-v=0.17 +/- 0.03 eV was obtained by using the Zn 2p energy level as a reference. Given the experimental band gap of 2.9 eV for the Zn0.95Cd0.05O, this would indicate a conduction band offset Delta E-C of 0.30 eV in this system. (C) 2005 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 27 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[2] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[3] Excitonic transitions in ZnO/MgZnO quantum well heterostructures [J].

Coli, G ;

Bajaj, KK .

APPLIED PHYSICS LETTERS, 2001, 78 (19) :2861-2863

[4] Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy [J].

Ding, SA ;

Barman, SR ;

Horn, K ;

Yang, H ;

Yang, B ;

Brandt, O ;

Ploog, K .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2407-2409

[5] Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications [J].

Dong, JW ;

Osinsky, A ;

Hertog, B ;

Dabiran, AM ;

Chow, PP ;

Heo, YW ;

Norton, DP ;

Pearton, SJ .

JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) :416-423

[6] Measurement of the band offsets between amorphous LaAlO3 and silicon [J].

Edge, LF ;

Schlom, DG ;

Chambers, SA ;

Cicerrella, E ;

Freeouf, JL ;

Holländer, B ;

Schubert, J .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :726-728

[7] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].

Guo, XL ;

Choi, JH ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L177-L180

[8] Near-UV emitting diodes based on a transparent p-n Junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno [J].

Hosono, H ;

Ohta, H ;

Hayashi, K ;

Orita, M ;

Hirano, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :496-502

[9] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101 [J].

Hwang, DK ;

Kang, SH ;

Lim, JH ;

Yang, EJ ;

Oh, JY ;

Yang, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[10]

KING SW, 1999, PROPERTIES PROCESSIN