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Floating stacking fault during homoepitaxial growth of Ag(111)

被引：15
作者：
de Vries, SA
Huisman, WJ
Goedtkindt, P
Zwanenburg, MJ
Bennett, SL
Vlieg, E
机构：
[1] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
[2] Univ Instelling Antwerp, Dept Chem, B-2610 Wilrijk, Belgium
[3] SERC, Daresbury Lab, CCLRC, Warrington WA4 4AD, Cheshire, England
[4] Univ Nijmegen, RIM, Dept Solid State Chem, NL-6525 ED Nijmegen, Netherlands
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.81.381
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the influence of Sb on the formation of stacking faults during Ag(111) growth using x-ray scattering. In equilibrium, a predeposition of 1/3 monolayer Sb results in a (root 3 X root 3)R 30 degrees reconstruction in which the top layer is wrongly stacked. Upon continued Ag growth at 100 degrees C, the Sb segregates and the Ag atoms return to the correct stacking, while the new Ag atoms in the top layer again have the wrong stacking. This thus effectively leads to a floating stacking fault. Because of kinetic limitations, the same effect occurs for lower Sb coverages.
引用
收藏
页码：381 / 384
页数：4
相关论文
共 28 条
[21]   Sb-enhanced nucleation in the homoepitaxial growth of Ag(111) [J].
van der Vegt, HA ;
Vrijmoeth, J ;
Behm, RJ ;
Vlieg, E .
PHYSICAL REVIEW B, 1998, 57 (07) :4127-4131
[22]   LOW-ENERGY-ELECTRON MICROSCOPY STUDIES OF GE AND AG GROWTH ON SI(111) [J].
VANDERGON, AWD ;
TROMP, RM ;
REUTER, MC .
THIN SOLID FILMS, 1993, 236 (1-2) :140-145
[23]   Surfactants used in Ag(111) homoepitaxy: Sb, In, Pt and O-2 [J].
vanderVegt, HA ;
Huisman, WJ ;
Howes, PB ;
Turner, TS ;
Vlieg, E .
SURFACE SCIENCE, 1996, 365 (02) :205-211
[24]   Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111) [J].
vanderVegt, HA ;
Alvarez, J ;
Torrelles, X ;
Ferrer, S ;
Vlieg, E .
PHYSICAL REVIEW B, 1995, 52 (24) :17443-17448
[25]   SURFACTANT-INDUCED LAYER-BY-LAYER GROWTH OF AG ON AG(111) [J].
VANDERVEGT, HA ;
VANPINXTEREN, HM ;
LOHMEIER, M ;
VLIEG, E ;
THORNTON, JMC .
PHYSICAL REVIEW LETTERS, 1992, 68 (22) :3335-3338
[26]   Integrated intensities using a six-circle surface X-ray diffractometer [J].
Vlieg, E .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1997, 30 (01) :532-543
[27]   AN ULTRAHIGH-VACUUM CHAMBER FOR SURFACE X-RAY-DIFFRACTION COMBINED WITH MBE [J].
VLIEG, E ;
VANTENT, A ;
DEJONGH, AP ;
NEERINGS, H ;
VANDERVEEN, JF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 262 (2-3) :522-527
[28]   SURFACTANT-INDUCED LAYER-BY-LAYER GROWTH OF AG ON AG(111) - ORIGINS AND SIDE-EFFECTS [J].
VRIJMOETH, J ;
VANDERVEGT, HA ;
MEYER, JA ;
VLIEG, E ;
BEHM, RJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (24) :3843-3846
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