High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

被引：69

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Tezuka, T ^{[1
]}

Numata, T ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol ASET, MIRAI Project, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 04期

关键词：

CMOS; ITOX; mobility; SiGe; SIMOX; strained-SOI;

D O I：

10.1109/TED.2003.812149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed high-performance strained-SOI CMOS devices on thin film relaxed SiGe-on-insulator (SGOI) substrates with high Ge content (25%) fabricated by the combination of separation-by-implanted-oxygen (SIMOX) and internal-thermal-oxidation (ITOX) techniques without using SiGe buffer structures. The maximum enhancement of electron,and hole mobilities of strained-SOI devices against the universal mobility amounts to 85 and 53%, respectively. On the other hand, we have also observed the reduction of carrier mobility in a thinner strained-Si layer or at higher vertical electric field conditions. For the first time, we have demonstrated a high-speed. CMOS ring-oscillator using strained-SOI devices, and its improvement amounts to 63% at the supply voltage of 1.5 V, compared to control-SOI CMOS.

引用

页码：988 / 994

页数：7

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