Novel SOI p-channel MOSFETs with higher strain in Si channel using double SiGe heterostructures

被引：12

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Tezuka, T ^{[1
]}

Takagi, SI ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

关键词：

buried-oxide; double-SiGe structure; mobility; MOSFETs; Raman spectroscopy; SIMOX; strained-Si;

D O I：

10.1109/16.974741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied p-channel advanced SOI MOS-FETs using double SiGe heterostructures fabricated by the combination of SIMOX and high-quality strained-Si/SiGe re-growth technologies, in order to introduce higher strain in Si channel. It was revealed that this double SiGe structure of secondSi(0.82)Ge(0.18)/first-Si0.93Ge0.07 allows the second SiGe layer to relax by about 70 %, because of the elastic energy balance between the second and the first-SiGe layers. As a result, the strain of Si layer on this double SiGe structure becomes higher than that of the single SiGe structure. Strained SOI p-MOSFETs using the double layer SiGe structure exhibited higher hole mobility than that of strained-SOI MOSFETs with single Si0.9Ge0.1 structure. The hole mobility enhancement of 30% and 45% was achieved in the strained-SOI MOSFETs with double SiGe structures, compared to that of the universal curve and the control-SOI MOSFETs, respectively.

引用

页码：7 / 14

页数：8

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