The morphology of axial and branched nanowire heterostructures

被引:171
作者
Dick, Kimberly A.
Kodambaka, Suneel
Reuter, Mark C.
Deppert, Knut
Samuelson, Lars
Seifert, Werner
Wallenberg, L. Reine
Ross, Frances M.
机构
[1] Lund Univ, S-22100 Lund, Sweden
[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Lund Univ, S-22100 Lund, Sweden
关键词
D O I
10.1021/nl0705900
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present an extensive investigation of the epitaxial growth of Au-assisted axial heterostructure nanowires composed of group IV and III-V materials and derive a model to explain the overall morphology of such wires. By analogy with 2D epitaxial growth, this model relates the wire morphology (i.e., whether it is kinked or straight) to the relationship of the interface energies between the two materials and the particle. This model suggests that, for any pair of materials, it should be easier to form a straight wire with one interface direction than the other, and we demonstrate this for the material combinations presented here. However, such factors as kinetics and the use of surfactants may permit the growth of straight double heterostructure nanowires. Finally, we demonstrate that branched nanowire heterostructures, also known as nanotrees, can be successfully explained by the same model.
引用
收藏
页码:1817 / 1822
页数:6
相关论文
共 28 条
[1]   One-dimensional heterostructures in semiconductor nanowhiskers [J].
Björk, MT ;
Ohlsson, BJ ;
Sass, T ;
Persson, AI ;
Thelander, C ;
Magnusson, MH ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060
[2]   Size- and shape-controlled GaAs nano-whiskers grown by MOVPE:: a growth study [J].
Borgström, M ;
Deppert, K ;
Samuelson, L ;
Seifert, W .
JOURNAL OF CRYSTAL GROWTH, 2004, 260 (1-2) :18-22
[3]   Interface study on heterostructured GaP-GaAs nanowires [J].
Borgstrom, Magnus T. ;
Verheijen, Marcel A. ;
Immink, George ;
de Smet, Thierry ;
Bakkers, Erik P. A. M. .
NANOTECHNOLOGY, 2006, 17 (16) :4010-4013
[4]   A new understanding of au-assisted growth of III-V semiconductor nanowires [J].
Dick, KA ;
Deppert, K ;
Karlsson, LS ;
Wallenberg, LR ;
Samuelson, L ;
Seifert, W .
ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (10) :1603-1610
[5]   Growth of GaP nanotree structures by sequential seeding of 1D nanowires [J].
Dick, KA ;
Deppert, K ;
Mårtensson, T ;
Seifert, W ;
Samuelson, L .
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :131-137
[6]   Optimization of Au-assisted InAs nanowires grown by MOVPE [J].
Dick, Kimberly A. ;
Deppert, Knut ;
Samuelson, Lars ;
Seifert, Werner .
JOURNAL OF CRYSTAL GROWTH, 2006, 297 (02) :326-333
[7]   Directed growth of branched nanowire structures [J].
Dick, Kimberly A. ;
Deppert, Knut ;
Karlsson, Lisa S. ;
Larsson, Magnus W. ;
Seifert, Werner ;
Wallenberg, L. Reine ;
Samuelson, Lars .
MRS BULLETIN, 2007, 32 (02) :127-133
[8]   Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].
Gudiksen, MS ;
Lauhon, LJ ;
Wang, J ;
Smith, DC ;
Lieber, CM .
NATURE, 2002, 415 (6872) :617-620
[9]   The influence of the surface migration of gold on the growth of silicon nanowires [J].
Hannon, JB ;
Kodambaka, S ;
Ross, FM ;
Tromp, RM .
NATURE, 2006, 440 (7080) :69-71
[10]   ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].
HIRAKI, A ;
SHUTO, K ;
KIM, S ;
KAMMURA, W ;
IWAMI, M .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612